MT47H256M8EB-25E AIT:C IC DRAM 2GBIT PARALLEL 60FBGA
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likeMT47H256M8EB-25E AIT:C IC DRAM 2GBIT PARALLEL 60FBGA
Brand：Micron
Model：MT47H256M8EB-25E AIT:C
stock：10338
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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product details
Common problem
Industry trends
| Memory format | DRAM |
| Installation type | Surface mount |
| packing | pallet |
| series | Automotive, AEC-Q100 |
| Part status | On sale |
| Memory type | Volatile |
| storage capacity | 2Gb(256M x 8) |
| Voltage - Supply | 1.7V ~ 1.9V |
| working temperature | -40°C ~ 95°C(TC) |
| Memory interface | Paralleling |
| Clock frequency | 400 MHz |
| Access time | 15ns |
| Access time | 400 ps |
| Encapsulation/Housing | 60-TFBGA |
| Country of origin | China/USA/Japan, etc |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | DDR2 |
| Random read | - |
| DWPD | - |
| Current - maximum | - |
| Flash architecture | - |
Common problem
Industry trends
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SK Hynix: It has secured the supply of equipment to its Chinese plant without obtaining a license within one year
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Advantages of Micron memory chips (why micron chips are recommended)
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